Samsung Electronics the world’s giant in memory technology recently announced that it has developed an 8 gigabyte registered dual inline memory module design, using Green DDR3 DRAM.
The new memory modules reportedly deliver superior performance and significantly less power consumption due to advanced 3D chip stacking technology, known as TSV (through silicon via). The technology is coming quick and has already been tested successfully by some of Samsung’s largest customers!
An 8 gigabyte RDIMM using Samsung’s 3D TSV technology can save up to 40% of the power used by a standard RDIMM chip. Also, the advanced chip stacking design allows for a considerable improvement in the chips density, which should help to off-set the decrease of memory sockets in newer servers. At the heart of Samsung’s TSV technology are micron sized holes bored through the silicon that contain a copper filling. By using the through silicon via (TSV) bonding process instead of the standard wire bonding, signal lines are shortened greatly thus enabling the multi stacked chip to operate at levels comparable to a single silicon chip.
Samsung Senior vice President and fellow, Dr. Chang-Hyun Kim says: “At Samsung we’re well positioned to accommodate early market demand for our state of the art TSV technology, as the industry continues to forge forward with even further advances in bonding technology to enable greater performance and operational efficiency” “Our 40nm class RDIMM being announced today marks the introduction of a more advanced and eco-friendly Green Memory product line up, utilizing 3D-TSV technology that is expected to enhance the leadership of Samsung and our allies in server and enterprise storage.
It is clear Samsung Electronics continues to maintain it's influence of being on the cutting edge of Green IT, with its 3D-TSV technology, large scale adoption of 3D-TSV is not expected to take place until 2012. Samsung expects the demand for its “Green Memory” products to help drive its memory business in the coming years.
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